Thermal treatment with enhanced intra-wafer, intra-and inter-bat

Coating apparatus – Gas or vapor deposition

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723MP, 438935, C23C 1600

Patent

active

056183496

ABSTRACT:
A process tube is surrounded by a heater. A number of gas inlet holes and a number of gas outlet holes are formed in the side wall of the process tube, the gas inlet and outlet holes facing each other and formed distributed in the longitudinal direction of the process tube. An oxidizing gas is supplied from a gas supply pipe to the gas inlet holes, and exhausted to a gas exhaust pipe via the gas outlet holes or lower gas outlet holes.

REFERENCES:
patent: 4098923 (1978-07-01), Alberti et al.
patent: 4134817 (1979-01-01), Bourdon
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4362632 (1982-12-01), Jacob
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4397724 (1983-08-01), Moran
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4838983 (1989-06-01), Schumaker et al.
patent: 5210466 (1993-05-01), Collins et al.
patent: 5266153 (1993-11-01), Thomas
Wolf, Stanley, et al., "Silicon Processing For The VLSI Era", vol. 1, Lattice Press.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermal treatment with enhanced intra-wafer, intra-and inter-bat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal treatment with enhanced intra-wafer, intra-and inter-bat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal treatment with enhanced intra-wafer, intra-and inter-bat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2395430

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.