Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2003-09-26
2010-02-23
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S635000, C257SE23001
Reexamination Certificate
active
07667301
ABSTRACT:
A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support30is formed from a main body portion56and a supporting portion58. In the main body portion56, a plurality of placing portions66extend parallel, and supporting portions58are provided on the placing portions66. A substrate68is placed on the supporting portion58. The supporting portion58has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion58is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion58.
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Ishiguro Ken-ichi
Nakamura Iwao
Nakamura Naoto
Nakashima Sadao
Shimada Tomoharu
Hitachi Kokusai Electric Inc.
Monbleau Davienne
Oliff & Berridg,e PLC
Trinh Hoa B
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