Thermal treatment apparatus

Coating apparatus – Gas or vapor deposition – Multizone chamber

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Details

118715, 118725, 118733, C23C 1600

Patent

active

054844835

ABSTRACT:
A thermal treatment apparatus for semiconductor materials is configured to prevent a metal contamination caused by a metal manifold and maintain a sufficient sealing and isolation effect between a transfer system containing chamber and a reaction chamber even when there exists a significant difference in pressure between the two chambers. A vent (7) having an inner diameter of 50 millimeters or greater for evacuating an inner section of a reaction chamber (1) made by quartz is provided in the reaction chamber (1). A seal flange is a double structure of a quartz flange (9) and a metal flange (10), and the metal flange is not emerged in the reaction chamber while the reaction chamber is sealed. Additionally, after the seal flange has been moved at a sealing position, a mobile section (12) is further moved such that the seal flange can not be pushed away by a pressure in the reaction chamber.

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