Thermal switch for integrated circuits, design structure,...

Details Thermal switch for integrated circuits, design structure,... Thermal switch for integrated circuits, design structure,...

2011-06-28

2011-06-28

Tra, Quan (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

C327S077000

Reexamination Certificate

active

07969228

ABSTRACT:
A single-ended thermal switch, design structure, and method of sensing temperature. A circuit includes a first MOS transistor and a second MOS transistor connected in series between a first power supply and a second power supply. The circuit apparatus also includes a signal conditioner connected to a node between the first and second MOS transistors. The first MOS transistor and the second MOS transistor are configured such that a leakage current of the second MOS transistor decreases a voltage of the node below a switch point of the signal conditioner when the temperature exceeds a threshold temperature.

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patent: 2006/0267127 (2006-11-01), Kim
patent: 2008/0252360 (2008-10-01), Yoshikawa
patent: 2009/0010301 (2009-01-01), Nagahisa
Ituero et al., “Leakage-based On-Chip Thermal Sensor for CMOS Technology”, 2007, IEEE, pp. 3327-3330.

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