Thermal-stress-resistant semiconductor sensor

Details Thermal-stress-resistant semiconductor sensor Thermal-stress-resistant semiconductor sensor

1997-06-05

2000-04-11

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With dam or vent for encapsulant

257776, 257670, 257414, H01L 23495

Patent

active

060491205

ABSTRACT:
A semiconductor sensor is provided with a good temperature characteristic, the sensor being capable of preventing a pressure or acceleration detection characteristic from being affected by a change of the surrounding temperature. A semiconductor chip is provided approximately in the center of a die pad of a lead frame and detects a displacement amount corresponding to a pressure or an acceleration. The displacement amount is converted into an electric signal and output. A resin mold is formed so as to cover the semiconductor chip. A thermal-stress-relieving buffer ring is provided on the die pad so as to surround an external circumference of the semiconductor sensor chip thereby preventing stress caused by thermal expansion/contraction of the resin mold from being directly applied to the semiconductor chip from the side.

REFERENCES:
patent: 4655088 (1987-04-01), Adams
patent: 5207102 (1993-05-01), Talkahashi et al.
patent: 5227663 (1993-07-01), Patil et al.
patent: 5604372 (1997-02-01), Yamaguchi
patent: 5847445 (1998-12-01), Wark et al.

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