Thermal shunt for active devices on silicon-on-insulator wafers

Details Thermal shunt for active devices on silicon-on-insulator wafers Thermal shunt for active devices on silicon-on-insulator wafers

2007-12-31

2009-12-29

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular temperature control

C372S033000, C257S712000, C257SE33075, C438S026000

Reexamination Certificate

active

07639719

ABSTRACT:
An optimized structure for heat dissipation is provided that may include two types of thermal shunts. The first type of thermal shunt employed involves using p and n metal contact layers to conduct heat away from the active region and into the silicon substrate. The second type of thermal shunt involves etching and backfilling a portion of the silicon wafer with poly-silicon to conduct heat to the silicon substrate.

REFERENCES:
patent: 6288426 (2001-09-01), Gauthier et al.

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