Thermal shield

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

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Details

C117S013000, C117S218000, C117S900000

Reexamination Certificate

active

10949236

ABSTRACT:
An apparatus for growing crystals includes a sealed chamber having a crucible assembly and a seed holder disposed therein. The crucible assembly is adapted to contain a melt therein and the seed holder is selectively positionable within the chamber from a first position relative to the crucible assembly to at least one subsequent position within the crucible assembly. A heater is configured and dimensioned to heat the melt disposed within the crucible assembly and an insulator is included for insulating the heater and the crucible. An actuator rotates at least one of the crucible assembly and the seed holder relative to the other and a support ring suspends the crucible assembly within the sealed chamber. A ceramic thermal shield is disposed atop the support ring and regulates the heat loss from the crucible assembly to an upper portion of the chamber.

REFERENCES:
patent: 5853480 (1998-12-01), Kubota et al.
patent: 5868836 (1999-02-01), Nakamura et al.
patent: 5922127 (1999-07-01), Luter et al.
patent: 5997635 (1999-12-01), Kubota et al.
patent: 6071341 (2000-06-01), Shimanuki et al.
patent: 6179911 (2001-01-01), Tomioka et al.
patent: 6482263 (2002-11-01), Ferry et al.

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