Thermal sensor/actuator in semiconductor material

Details Thermal sensor/actuator in semiconductor material Thermal sensor/actuator in semiconductor material

1995-05-16

1997-01-21

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257415, H01L 31058, H01L 2982

Patent

active

055962190

ABSTRACT:
Semiconductor component with monolithically integrated electronic circuits and monolithically integrated sensor/acutator, whereby the sensor/actuator is manufactured with methods of surface micromachining in a sensor layer (3) of polysilicon that is structured, for example, with sensor webs (6), and these sensor webs (6) are thermally insulated from a silicon substrate (1) by a cavity (4) that is produced in a sacrificial layer (2) and is closed gas-tight toward the outside with a closure layer (5).

REFERENCES:
patent: 4478077 (1984-10-01), Bohrer et al.
Sensors and Actuators A. 25-27 (1991), "Silicon Gas Glow Sensors Using Industrial CMOS and Bipolar IC Technology", D. Moser R. Lenggenhager and H. Baltes, pp. 577-581.
IEEE Transactions on Electron Devices, vol. 39, No. 6, Jun. 1992, "An Integrated Mass Flow Sensor with On-Chip CMOS Interface Circuitry", Euisik Yoon and Kensall D. Wise, pp. 1376-1386.

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