Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-11-04
2000-05-30
Lund, Jeffrie R
Coating apparatus
Gas or vapor deposition
With treating means
118724, 392411, 392416, 219385, 219405, C23C 1600, F27D 100
Patent
active
06067931&
ABSTRACT:
A thermal processor for at least one semiconductor wafer includes a reactor chamber having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.
REFERENCES:
patent: 3372672 (1968-03-01), Wright et al.
patent: 3665139 (1972-05-01), Steggewentz
patent: 4160929 (1979-07-01), Thorington et al.
patent: 4409512 (1983-10-01), Walsh
patent: 4435445 (1984-03-01), Allred et al.
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4579080 (1986-04-01), Martin et al.
patent: 4653428 (1987-03-01), Wilson et al.
patent: 4654509 (1987-03-01), Robinson et al.
patent: 4938815 (1990-07-01), McNeilly
patent: 5433791 (1995-07-01), Brewer et al.
patent: 5636320 (1997-06-01), Yu et al.
patent: 5715361 (1998-02-01), Moslehi
patent: 5781693 (1998-07-01), Ballance et al.
patent: 5862302 (1999-01-01), Okase
Grant, Julius, Hackh's Chemical Dictionary, p. 346, 1969.
Besancon, Robert M., The Encyclopedia of Physics, Third Edition, pp. 588-591, Oct. 1991.
"Effect of Infrared Transparency on the Heat Transfer Through Windows: A Clarification of the Greenhouse Effect," SD Silverstein, Science, vol. 193, Jul. 16, 1976.
"Antimony-Doped Tin Oxide Films Deposited by the Oxidation of Tetramethyltin and Trimethylantimony," TP Chow; M. Ghezzo, BJ Baliga, J. Electrochem. Soc.: Solid-State Science and Technology, May 1982, pp. 1040-1045.
"Temperature Measurement in a Furnace-Heated RTP System," Chunghsin Lee, Solid-State Technology, Apr. 1993.
"A Continuous Heat Source--Rapid Thermal Processor," C. Lee, AB Wittkower, Semiconductor Fabtech 94.
Spectral Emissivity of Silicon, Tsutomu Sato, The Research Institute for Scientific Measurements, Tohoku University, Gojyo-Dori, Sendai, Nov. 2, 1966, pp. 339-347.
"Emissivity of Silicon at Elevated Temperatures," PJ Timans, J. Applied Phys. 74 (10) Nov. 15, 1993, pp. 6353-6364.
"The Effect of Multilayer Patterns on Temperature Uniformity During Rapid Thermal Processing," Jeffrey P. Hebb, Klavs F. Jensen, J. Electrochem. Soc., vol. 143, No. 3, Mar. 1996, pp. 1142-1151.
"Rapid Thermal Processing Systems," Ronald E. Sheets, Microelectronic Manufacturing and Testing, Jul. 1985, pp. 16-18.
"Optical Properties of Tin-Doped Indium Oxide Determined by Spectroscopic Ellipsometry," Tobias Gerfin, Michael Gratzel, J. Applied Phys. 79 (3) Feb. 1, 1996, pp. 1722-1729.
"Equipment Performance Issues in Rapid Thermal Processing," Walter Thurston, Richard Seaman, Microelectronic Manufacturing and Testing, Jul. 1985.
Bergman Rolf Sverre
Ghezzo Mario
Gorczyca Thomas Bert
Huey Charles Samuel
Page Timothy Dietrich
Agosti Ann M.
Breedlove Jill M.
General Electric Company
Lund Jeffrie R
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