Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-03-03
1997-05-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118728, 118729, C23C 1600
Patent
active
056266804
ABSTRACT:
Process for treating multiple parallel wafers positioned in a heating zone surrounded by a heater emitting radiant heat. A space of from 0.5 to 2.55 cm is maintained between each wafer, and the outer portions of each wafer are shielded from radiant heat emitted by the heater by means of a circular heat shield positioned between the outer edge of the wafer and the heater. The circular heat shield has an upper edge and a bottom edge, and is positioned at a distance of less than 0.5 cm from the outer edge of the wafer. The wafer is positioned to be substantially centered between said upper edge and said bottom edge of its respective heat shield, and the circular heat shield has a height of from 0.35 to 0.95. The heat provided by the heater can be sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of 100.degree. C./min without causing thermal stress damage to the wafers. The thermal treatment apparatus comprises a combination of heating chamber surrounded by a heater and a thermal treatment boat as described above. Each wafer is positioned within a circular shield wall, and a distance of from 0.5 to 2.55 cm is maintained between adjacent wafers. The inner diameter of the circular shield wall is from 20.3 to 21.0 cm and the height thereof is from 0.35 to 0.95 cm. The inner diameter of the circular shield wall can be 3 mm greater than the outer diameter of said wafer.
REFERENCES:
patent: 5320680 (1994-06-01), Learn et al.
Kowalski Jeffrey M.
Porter Cole D.
Sanchez Jessie R.
Bueker Richard
Silicon Valley Group Inc.
Walker William B.
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