Thermal process for forming high value resistors

Details Thermal process for forming high value resistors Thermal process for forming high value resistors

1996-01-16

1997-07-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437193, 437235, 437247, 437918, 148DIG136, H01L 21293, H01L 21321

Patent

active

056521812

ABSTRACT:
The present invention develops several methods used in a semiconductor fabrication process to form a resistive material having a specific resistive value. A first method uses the steps of: forming a titanium layer over a silicon substrate; and subjecting the titanium layer to a rapid thermal processing cycle. A second method uses the steps of: forming a titanium layer over a silicon substrate; subjecting the titanium layer to a rapid thermal processing cycle; and forming a titanium nitride layer over the thermally processed titanium. A third method uses the steps of: forming an insulating layer over a silicon substrate; forming an undoped polysilicon layer over the insulating layer; forming a titanium layer over the polysilicon layer; subjecting the titanium layer to a rapid thermal processing cycle; and forming a titanium nitride layer over the thermally processed titanium. Additionally, the resistive structure can be capped using a nitride layer.

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