Thermal printing head

Electric heating – Microwave heating – Tunnel furnace

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Details

357 65, 357 67, 357 59, 357 71, 219216, 219543, H01L 2356, H01L 2966, H01L 2348

Patent

active

040965104

ABSTRACT:
A semiconducting silicon device includes a semiconductor silicon substrate having a diffused layer and a silicon oxide film, a multi-layered electrode provided on the silicon oxide film and in contact with the diffused layer. The multi-layered electrode comprises Ti or Mo as first layer of electrode material and Ni as a second layer.

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patent: 3632436 (1972-01-01), Denning
patent: 3633076 (1972-01-01), Arndt
patent: 3667008 (1972-05-01), Katnack
patent: 3746944 (1973-01-01), Naradka et al.
patent: 3796928 (1974-03-01), Doo et al.
patent: 3852563 (1974-12-01), Bohorquez
patent: 3913126 (1975-10-01), Hooker et al.
patent: 3931492 (1976-01-01), Takano et al.
patent: 3939325 (1976-01-01), Otani et al.

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