Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1994-06-07
1997-04-08
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257468, 257469, 257536, 257537, 338 22R, 338 22SD, H01L 31058
Patent
active
056190603
ABSTRACT:
A thermal picture synthesis device (1) of multi-layer construction has a resistor element (3) spaced from a semi-conductor substrate layer (2). The resistor element (3) is made of titanium or Ni-chrome. A drive element layer (4) is provided either in or attached to the substrate layer (2) for the resistor element (3). By placing the drive element layer parallel to and spaced from the resistor element (3) it is possible to pack a plurality of resistor elements (3) into a side by side adjacent array with a high fill factor or packing density and this coupled with the use of titanium or Ni-chrome for the resistor elements (3) and the spacing of these elements from the semi-conductor substrate (2) allows the device to operate at a higher apparent temperature than is conventional.
REFERENCES:
patent: 5300915 (1994-04-01), Higashi et al.
Lake Stephen P.
Pritchard Alan P.
Sturland Ian M.
British Aerospace Public Limited Company
Tran Minhloan
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