Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-05-17
2005-05-17
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C118S726000
Reexamination Certificate
active
06893939
ABSTRACT:
A thermal physical vapor deposition source for depositing material onto a substrate includes an elongated container for receiving the material, the container having a conductance CBin the elongated direction, and a heater for heating the material in the container to vaporize the material to a partial pressure Pm. The container has at least one member defining a plurality of apertures arranged along the length of the member, the apertures having a total conductance CA, whereinCACB≤0.5;and end heaters for heating each side of the container to reduce condensation of material onto the container.
REFERENCES:
patent: 4356429 (1982-10-01), Tang
patent: 4539507 (1985-09-01), VanSlyke et al.
patent: 4720432 (1988-01-01), VanSlyke et al.
patent: 4769292 (1988-09-01), Tang et al.
patent: 5550066 (1996-08-01), Tang et al.
patent: 6237529 (2001-05-01), Spahn
patent: 6337102 (2002-01-01), Forrest et al.
patent: 6749906 (2004-06-01), Van Slyke
patent: 20030101937 (2003-06-01), Van Slyke et al.
patent: 20030168013 (2003-09-01), Freeman et al.
patent: 20040144321 (2004-07-01), Grace et al.
Freeman Dennis R.
Grace Jeremy M.
Klug Justin H.
Redden Neil P.
Eastman Kodak Company
Le Thao P.
Nelms David
Owens Raymond L.
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