Thermal physical vapor deposition source with minimized...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S726000

Reexamination Certificate

active

06893939

ABSTRACT:
A thermal physical vapor deposition source for depositing material onto a substrate includes an elongated container for receiving the material, the container having a conductance CBin the elongated direction, and a heater for heating the material in the container to vaporize the material to a partial pressure Pm. The container has at least one member defining a plurality of apertures arranged along the length of the member, the apertures having a total conductance CA, whereinCACB≤0.5;and end heaters for heating each side of the container to reduce condensation of material onto the container.

REFERENCES:
patent: 4356429 (1982-10-01), Tang
patent: 4539507 (1985-09-01), VanSlyke et al.
patent: 4720432 (1988-01-01), VanSlyke et al.
patent: 4769292 (1988-09-01), Tang et al.
patent: 5550066 (1996-08-01), Tang et al.
patent: 6237529 (2001-05-01), Spahn
patent: 6337102 (2002-01-01), Forrest et al.
patent: 6749906 (2004-06-01), Van Slyke
patent: 20030101937 (2003-06-01), Van Slyke et al.
patent: 20030168013 (2003-09-01), Freeman et al.
patent: 20040144321 (2004-07-01), Grace et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermal physical vapor deposition source with minimized... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal physical vapor deposition source with minimized..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal physical vapor deposition source with minimized... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3394011

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.