Thermal oxide etch technique

Details Thermal oxide etch technique Thermal oxide etch technique

1995-08-29

1997-05-27

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 438723, H01L 213065

Patent

active

056328559

ABSTRACT:
A process is provided for etching thermally grown oxide. The process involves various steps and specific etch processing parameters used within a parallel electrode reactor. There are pre-stabilizing steps, followed by an etch step, which is then followed by post-stabilizing steps. The post-stabilizing steps may further include a particle removal or byproduct flush step in addition to the post-stabilizing steps. The process parameters are chosen to remove thermal oxide within contact regions at a uniform rate. The resulting thermal oxide is substantially uniform with less than 3.0% variance in thickness across the contact regions and across like areas of the entire wafer surface. The unique combination of pre-stabilize, etch, post-stabilize steps and process parameters chosen for each step thereby provides an improved etch uniformity of thermal oxide films within fine-line areas.

REFERENCES:
patent: 5169487 (1992-12-01), Langley et al.
patent: 5398712 (1995-03-01), Wang et al.
patent: 5445709 (1995-08-01), Kojima et al.

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