Thermal mismatch compensation to produce free standing substrate

Details Thermal mismatch compensation to produce free standing substrate Thermal mismatch compensation to produce free standing substrate

1998-07-02

2000-11-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117 95, 117101, 117913, 117915, 117952, 117954, C30B 2504

Patent

active

061464570

ABSTRACT:
A method for producing thick, high quality GaN substrates uses an epitaxially deposited film is used as a substrate material for further device or epitaxial processing. The film is deposited using an epitaxial technique on a thin substrate called the disposable substrate. The deposited film is thick enough so that upon cooling the thermal mismatched strain is relieved through cracking of the lower disposable substrate and not the newly deposited epitaxy. The epitaxial film now becomes a platform for either further epitaxial deposition or device processing.

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patent: 5641381 (1997-06-01), Bailey et al.
patent: 5679152 (1997-10-01), Tischler et al.
patent: 5710057 (1998-01-01), Kenney

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