Thermal/microwave remote plasma multiprocessing reactor and meth

Details Thermal/microwave remote plasma multiprocessing reactor and meth Thermal/microwave remote plasma multiprocessing reactor and meth

1987-04-21

1990-04-03

Bueker, Richard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

4272481, 4272552, 4272553, 4272554, 118715, 118723, 118725, C23C 1600

Patent

active

049139290

ABSTRACT:
A novel cold wall single wafer rapid thermal/microwave remote plasma multiprocessing reactor comprising a vacuum chamber having means for mounting a wafer in the chamber, means for providing optical flux mounted adjacent one wall facing the back side of the wafer for optical heating of the wafer, and ports for plasma injection such that remote plasma can be generated and pumped into the chamber. Ports are provided for gas injection both through the plasma generating chamber and for non-plasma injection. The plasma and non-plasma ports are connected through separate manifolds to a plurality of gas sources. The comprehensive reactor design is such that several wafer processing steps can be done sequentially in situ, while providing for optimization of each processing step.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo

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