Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-10-31
2006-10-31
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S499000, C257S528000, C257SE31029
Reexamination Certificate
active
07129560
ABSTRACT:
A memory cell includes a storage medium having a programmable thermal impedance, and a heater in thermal communication with the storage medium for programming the thermal impedance. In another aspect, a memory cell includes a storage medium having a programmable electrical impedance, and a heater in thermal communication with the storage medium for programming the electrical impedance. In a third aspect, a memory device includes a plurality of the memory cells in accordance with the first and/or second aspect of the present invention.
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Hamann Hendrik F.
O'Boyle Martin Patrick
Wickramasinghe H. Kumar
Flynn Nathan J.
International Business Machines - Corporation
Kaufman, Esq. Stephen C.
McGinn IP Law Group PLLC
Quinto Kevin
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