Thermal/mechanical buffer for HgCdTe/Si direct hybridization

Details Thermal/mechanical buffer for HgCdTe/Si direct hybridization Thermal/mechanical buffer for HgCdTe/Si direct hybridization

1988-08-02

1994-11-15

Cain, David C.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

H01L 2714

Patent

active

053650883

ABSTRACT:
A Group II-VI photodetector array 12 is coupled to a silicon readout circuit 14 by means of a thermal/mechanical buffer 16 comprised of a body of material which has a characteristic thermal expansivity which is more similar to that of the thermal expansivity of the Group II-VI material than that of silicon. One suitable material is Al.sub.2 O.sub.3. The buffer has a plurality of conductive vias 18 formed therethrough, each of the conductive vias being "bumped" at opposite ends thereof. The buffer accommodates the differing expansivities of, for example, HgCdTe and silicon, thereby relieving thermally generated stresses with a consequent improvement in the reliability of the resulting hybrid structure.

REFERENCES:
patent: 4597004 (1986-06-01), Longeway et al.
patent: 4692207 (1987-09-01), Bouadma et al.
patent: 4694318 (1987-09-01), Capasso
patent: 4700209 (1987-10-01), Webb

Affiliated with

Also associated with

Rating

Thermal/mechanical buffer for HgCdTe/Si direct hybridization does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal/mechanical buffer for HgCdTe/Si direct hybridization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal/mechanical buffer for HgCdTe/Si direct hybridization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1099504