Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-12-12
2006-12-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S014000, C428S332000, C428S408000, C427S430100, C427S249100
Reexamination Certificate
active
07148512
ABSTRACT:
An exemplary thermal interface (40) includes a silver colloid base (32), and an array of carbon nanotubes (22) disposed in the silver colloid base uniformly. The carbon nanotubes have nanometer-scale silver filled therein, are substantially parallel to each other, and extend from a first surface (42) to a second surface (44) of the thermal interface.
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patent: 6407922 (2002-06-01), Eckblad et al.
patent: 2005/0136248 (2005-06-01), Leu et al.
Berber et al., “Unusually High Thermal Conductivity of Carbon Nanotubes,” vol. 84, No. 20,Physical Review Letters, 2000, pp. 4613-4616.
Fan et al., “Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties,” vol. 283,Science, 1999, pp. 512-514.
Liu et al., “Isotope Labeling of Carbon Nanotubes and Formation of12C—13C Nanotube Junctions,” vol. 123,J. Am. Chem. Soc., 2001, pp. 11502-11503.
Chen Ga-Lane
Leu Charles
Yu Tai-Cheng
Flynn Nathan J.
Hon Hai Precision Industry Co. Ltd.
Morris Manning & Martin
Tingkang Xia, Esq. Tim
Tran Tan
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