Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-10-16
2007-10-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S719000, C257SE23100, C165S104150, C438S106000, C438S122000
Reexamination Certificate
active
11437084
ABSTRACT:
An interface is formed by pressing a patterned first surface and a second surface together, with a particle-loaded interface material in between. The first surface is fabricated with a pattern of channels designed to redistribute the velocity gradients that occur in the interface material during interface formation in order to control the arrangement, orientation and concentration of particles at the end of the interface formation. The concept finds application in thermal interfaces and controlled placement of nano and micro particles and biological molecules.
REFERENCES:
patent: 5345107 (1994-09-01), Daikoku et al.
patent: 2005/0016714 (2005-01-01), Chung
patent: 2005/0061474 (2005-03-01), Gelorme et al.
patent: 2006/0246276 (2006-11-01), Chung
Thermal Resistance of Particle Laden Polymeric Thermal Interface Materials by R. Prasher, et al, In ASME Journal of Heat Transfer, vol. 125, Dec. 2003.
Brunschwiler Thomas J.
Kloter Urs
Linderman Ryan Joesph
Michel Bruno
Rothuizen Hugo E.
Dougherty Anne Vachon
Nelson E. Dwayne
Pert Evan
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