Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-12-29
2009-08-25
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S720000, C257SE23101
Reexamination Certificate
active
07579686
ABSTRACT:
The formation of electronic assemblies including a heat spreader coupled to a die through a thermal interface material is described. In one embodiment, the heat spreader includes a surface having a structure extending a distance outward therefrom. The thermal interface material includes a first region having a first thickness and a second region having a second thickness, the first thickness being smaller than the second thickness. The structure extending a distance outward from the heat spreader is positioned on the first region of the thermal interface material. The total of the first thickness of the thermal interface material and the distance the structure extends outward from the surface of the heat spreader is substantially the same as the second thickness. In one aspect of certain embodiments, the first region of the thermal interface material and the structure on the heat spreader are in alignment with a hot spot on the die. Other embodiments are described and claimed.
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Chiu Chia-Pin
Hu Xuejiao
Ahmed Selim
Intel Corporation
Konrad Raynes & Victor LLP
Purvis Sue
Raynes Alan S.
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