Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-08-07
2007-08-07
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C977S712000, C977S735000, C977S742000, C977S743000, C977S842000, C977S848000, C977S855000, C977S856000
Reexamination Certificate
active
11024513
ABSTRACT:
A thermal interface material (40) includes a macromolecular material (32), and a plurality of carbon nanotubes (22) embedded in the macromolecular material uniformly. The thermal interface material includes a first surface (42) and an opposite second surface (44). Each carbon nanotube is open at both ends thereof, and extends from the first surface to the second surface of the thermal interface material. A method for manufacturing the thermal interface material includes the steps of: (a) forming an array of carbon nanotubes on a substrate; (b) submerging the carbon nanotubes in a liquid macromolecular material; (c) solidifying the liquid macromolecular material; and (d) cutting the solidified liquid macromolecular material to obtain the thermal interface material with the carbon nanotubes secured therein.
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Fan Shou-Shan
Huang Hua
Liu Chang-Hong
Hon Hai Precision Industry Co. Ltd.
Knapp Jeffrey T.
Pert Evan
Tran Tan
Tsing Hua University
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