Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-06-07
2011-06-07
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S717000, C257S720000, C257SE33076, C257SE31131, C257SE23051, C257SE23098, C257SE23101
Reexamination Certificate
active
07956456
ABSTRACT:
An electronic package comprising a semiconductor device, a heat spreader layer, and a thermal interface material layer located between the semiconductor device and the heat spreader layer. The thermal interface material layer includes a resin layer having heat conductive particles suspended therein. A portion of the particles are exposed on at least one non-planar surface of the resin layer such that the portion of exposed particles occupies a majority of a total area of a horizontal plane of the non-planar surface.
REFERENCES:
patent: 6255140 (2001-07-01), Wang
patent: 6563225 (2003-05-01), Soga et al.
patent: 2003/0077478 (2003-04-01), Dani et al.
patent: 2004/0007780 (2004-01-01), Hundt et al.
patent: 2005/0056365 (2005-03-01), Chan
patent: 2008/0124841 (2008-05-01), Too et al.
patent: 2008/0274349 (2008-11-01), Chiu et al.
patent: 2009/0166852 (2009-07-01), Hu
Gupta Vikas
Gurrum Siva Prakash
Hundt Paul Joseph
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Long K
Tung Yingsheng
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