Thermal interface material compound and method of...

Compositions – Heat-exchange – low-freezing or pour point – or high boiling... – Organic components

Reexamination Certificate

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C428S323000, C428S332000, C428S334000, C106S403000

Reexamination Certificate

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07445727

ABSTRACT:
A high thermal conductivity thermal interface material compound includes 53% by weight of polyethylene glycol, 42% by weight of silicon carbide, and 5% by weight of lithium ions. The method of fabricating the thermal interface material includes the steps of: filling the above-described compound in a container and blending them to form aggregative compound by a blender; mixing the compound by a rolling machine to disperse the aggregative compound and filling the compound to another container; blending the compound and breaking the air bubble generated thereof, and pumping the air out of the container by a vacuum pump at the same time, to fabricate the high thermal conductivity thermal interface material compound without air bubbles.

REFERENCES:
patent: 7404853 (2008-07-01), Kendall
patent: 2005/0016714 (2005-01-01), Chung
patent: 2006/0246276 (2006-11-01), Chung
patent: 2007/0031684 (2007-02-01), Anderson et al.
patent: 2000-119643 (2000-04-01), None
D.D.L. Chung, “Materials for Thermal Conduction”, Applied Thermal Engineering, 21 (2001) 1593-1605.
Xu et al. “Lithium Doped Polyethylene-Glycol-Based Thermal Interface Pastes for High Thermal Contact Conductance”, Journal of Electronic Packaging, Transactions of the ASME, vol. 124, 2002, 188-191.
Japanese machine translation of JP 2000-119643 A, Ishii et al. Apr. 2000.

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