Thermal energy removal structure and method

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

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C257S718000, C257S758000, C438S620000, C438S622000

Reexamination Certificate

active

07545034

ABSTRACT:
An electrical structure including a first substrate comprising a plurality of electrical components, a first thermally conductive film layer formed over and in contact with a first electrical component of the plurality of electrical components, a first thermally conductive structure in mechanical contact with a first portion of the first thermally conductive film layer, and a first thermal energy extraction structure formed over the first thermally conductive structure. The first thermal energy extraction structure is in thermal contact with the first thermally conductive structure. The first thermal energy extraction structure is configured to extract a first portion of thermal energy from the first electrical component through the first thermally conductive film layer and the first thermally conductive structure.

REFERENCES:
patent: 5744865 (1998-04-01), Jeng et al.
patent: 6333557 (2001-12-01), Sullivan
patent: 6432809 (2002-08-01), Tonti et al.
patent: 7052937 (2006-05-01), Clevenger et al.
patent: 7286359 (2007-10-01), Khbeis et al.
patent: 2006/0278901 (2006-12-01), Dangelo et al.

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