Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Patent
1992-01-28
1994-05-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
257625, 257 77, H01L 2906
Patent
active
053130944
ABSTRACT:
A heat dissipation apparatus for dissipation of thermal energy from an isolated active silicon region to an underlying supportive substrate is disclosed. Such an apparatus comprises a diamond filled trench having walls extending through the isolated active silicon region, an underlying insulative layer, and into the supportive substrate, whereby said diamond filled trench provides a high thermal conductive path from said active silicon region to said substrate.
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"Fabrication of Microchannels in Synthetic Polycrystalline Diamond Thin Films for Heat Sinking Applications", by R. Ramesham, T. Roppel, and C. Ellis, J. Electrochem. Soc. vol. 138, No. 6, Jun. 1991.
Beyer Klaus D.
Hsieh Chang-Ming
Hsu Louis L.
Kotecki David E.
Yuan Tsoring-Dih
Balconi-Lamica Michael J.
International Business Machines Corportion
Jackson Jerome
Meier Stephen D.
Romanchik Richard A.
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