Thermal disproportionation of organooxysilanes

Details Thermal disproportionation of organooxysilanes Thermal disproportionation of organooxysilanes

1991-11-12

1992-06-30

Shaver, Paul F.

Organic compounds -- part of the class 532-570 series

Organic compounds

Silicon containing

C07F 708

Patent

active

051264722

ABSTRACT:
The present invention is a process for the thermal disproportionation of organooxysilanes containing at least one hydrogen, one organooxy, and one cyclic substitutent all bonded to a single silicon atom, where the cyclic substituent is selected from a group consisting of aryls, substituted aryls, cycloalkyls, and substituted cycloalkyls. The process involves heating the organooxysilanes in a liquid phase to a temperature within a range of about 250.degree. C. to 450.degree. C. The present process is particularly useful for the disproportionation of phenyldialkoxysilanes to diphenydialkoxysilanes and cycloalkyldialkoxysilanes to dicyclodialkoxysilanes.

REFERENCES:
patent: 2530367 (1950-11-01), Hance et al.
patent: 2723983 (1955-11-01), Bailey
patent: 2746981 (1956-05-01), Wagner
patent: 4667047 (1987-05-01), Imaki et al.
Gilmon et al., J. Org. Chem., 23:326-328 (1958).
Eaborn et al., J. Organometal. Chem., 4:489 (1965).

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