Thermal disproportionation of cycloalkylsilanes

Organic compounds -- part of the class 532-570 series – Organic compounds – Silicon containing

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C07F 708

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051264714

ABSTRACT:
The present invention is a process for the thermal disproportionation of cycloalkylsilanes containing at least one hydrogen atom and one halogen atom bonded to a single silicon atom. The process involves heating the cycloalkylsilanes in a liquid phase to a temperature within a range of about 250.degree. C. to 450.degree. C. The present process is especially useful for the thermal disproportionation of cyclopentyldichlorosilane to dicyclopentyldichlorosilane and for the thermal disproportionation of cyclohexyldichlorosilane to dicyclohexyldichlorosilane.

REFERENCES:
patent: 2223983 (1955-11-01), Bailey
patent: 2530367 (1950-11-01), Hance et al.
patent: 2746981 (1956-05-01), Wagner
patent: 4667047 (1987-05-01), Imaki et al.
Gilman et al., J. Org. Chem. 23:326-328 (1958).
Eaborn et al., J. Organometal. Chem. 4:489 (1965).

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