Thermal detector with stress-aligned thermally sensitive element

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive

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2503383, H01L 3109

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active

060202165

ABSTRACT:
Method of stress-aligning a thermally sensitive element may comprise the step of forming a thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be crystallized. A stress alignment layer (82) may be formed in communication with the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be heated above a transition temperature of the thermally sensitive material. The stress alignment layer (82) may be expanded relative to the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be cooled below the transition temperature of the thermally sensitive material. The stress alignment layer (82) may be compressed relative to the thin film layer of thermally sensitive material (80) as the thin film layer of thermally sensitive material (80) cools below the transition temperature to preferentially-order crystals of the thermally sensitive material.

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