Thermal decomposition of silane to form hydrogenated amorphous S

Details Thermal decomposition of silane to form hydrogenated amorphous S Thermal decomposition of silane to form hydrogenated amorphous S

1979-06-26

1980-12-02

Cooper, Jack

Coating processes

Electrical product produced

Photoelectric

252 623E, 427 84, 427 95, 428428, 428446, 423349, C01B 3302

Patent

active

042371511

ABSTRACT:
This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

REFERENCES:
patent: 2993763 (1961-07-01), Lewis
patent: 4064521 (1977-12-01), Carlson
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151058 (1979-04-01), Kaplan et al.
Deneuville et al. "Thin Solid Films," vol. 55, No. 1, Nov., 1978 pp, 137-141, Elsevier Sequoia S. A. Lausanne.

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