Thermal CVD synthesis of nanostructures

Coating processes – Immersion or partial immersion – Chemical compound reducing agent utilized

Reexamination Certificate

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C427S248100, C427S255280, C427S255310, C427S255320

Reexamination Certificate

active

10646360

ABSTRACT:
The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.

REFERENCES:
patent: 6123819 (2000-09-01), Peeters
patent: 6129901 (2000-10-01), Moskovits et al.
patent: 6159856 (2000-12-01), Nagano
patent: 6232706 (2001-05-01), Dai et al.
patent: 6248674 (2001-06-01), Kamins et al.
patent: 6286226 (2001-09-01), Jin
patent: 6294450 (2001-09-01), Chen et al.
patent: 6297063 (2001-10-01), Brown et al.
patent: 6325909 (2001-12-01), Li et al.
patent: 6340822 (2002-01-01), Brown et al.
patent: 6346303 (2002-02-01), Shih et al.
patent: 6383923 (2002-05-01), Brown et al.
patent: 6407443 (2002-06-01), Chen et al.
patent: 6458621 (2002-10-01), Beck
patent: 6465132 (2002-10-01), Jin
patent: 6469425 (2002-10-01), Sakai et al.
patent: 6472802 (2002-10-01), Choi et al.
patent: 6489704 (2002-12-01), Kucherov et al.
patent: 6504292 (2003-01-01), Choi et al.
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6517800 (2003-02-01), Cheng et al.
patent: 6525461 (2003-02-01), Iwasaki et al.
patent: 6562633 (2003-05-01), Misewich et al.
patent: 2002/0094450 (2002-07-01), Wang et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2003/0039602 (2003-02-01), Sharma et al.
Article—The synthesis of metal oxide nanowires by directly heating metal samples in appropriate oxygen atmospheres, H. Y. Dang, J. Wang, and S. S. Fan, Nanotechnology, 14, 2003, pp. 738-741.
Article—Synthesis, Raman scattering and defects of β-Ga2O5nanorods, Y. H. Gao, Y. Bando, T. Sato, and Y. F. Zhang, Applied Physics Letters, vol. 81, No. 12, Sep. 16, 2002, pp. 2267-2269.
Article—General Synthesis of Compound Semiconductor Nanowires, Xiangfeng Duan and Charles M. Lieber, Adv. Mater., vol. 12, No. 4, 2000, pp. 298-302.
Article—Direct Synthesis of Gallium Oxide Tubes, Nanowires, and Nanopaintbrushes, Shashank Sharma and Mahendra K. Sunkara, J. Am. Chem. Soc., 6 pages (A-F).
Article—Gallium Oxide Nanoribbons and Nanosheets, Z. R. Dai, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B, vol. 106, No. 5, 2002, pp. 902-904.
Article—Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires, Yiying Wu, Rong Fan, and Piedong Yang, Nano Letters, A-D.
Article—β-G2O3nanowires synthesized from milled GaN powders, B. C. Kim, K. T. Sun, K. S. Park, K. J. Im, T. Noh, M. Y. Sung and S. Kim, Appl. Phys. Lett., vol. 80, No. 3, Jan. 21, 2002, pp. 479-481.
Article—Growth and optical characterization of Ga2O3nanobelts and nanosheets, L. Dai, X. L. Chen, X. N. Zhang, A. Z. Jin, T. Zhou, B. Q. Hu and Z. Zhang, J. Appl. Phys., vol. 92, No. 2, Jul. 15, 2002, pp. 1062-1064.

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