Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-05-29
2007-05-29
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S249000, C257S276000, C257S747000, C257S773000, C257S905000, C257SE29064
Reexamination Certificate
active
11331321
ABSTRACT:
The invention relates to a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention further relates to a semiconductor device and a method of forming a semiconductor device with an interlayer dielectric that is a thermally conducting material.
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Doyle Brian S.
Liang Chunlin
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Pham Thanh V.
Smith Matthew
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