Thermal conducting trench in a semiconductor structure

Details Thermal conducting trench in a semiconductor structure Thermal conducting trench in a semiconductor structure

2007-05-29

2007-05-29

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S249000, C257S276000, C257S747000, C257S773000, C257S905000, C257SE29064

Reexamination Certificate

active

11331321

ABSTRACT:
The invention relates to a trench filled with a thermally conducting material in a semiconductor substrate. In one embodiment, the semiconductor device has a trench defining a cell region, wherein a portion of the trench includes a thermally conducting material, and a contact to the thermally conducting material. The invention further relates to a semiconductor device and a method of forming a semiconductor device with an interlayer dielectric that is a thermally conducting material.

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