Thermal annealing of semiconductor devices

Details Thermal annealing of semiconductor devices Thermal annealing of semiconductor devices

1991-12-09

1994-02-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437934, 148DIG71, H01L 21326

Patent

active

052847950

ABSTRACT:
A method of processing a semiconductor device in which a microwave field is generated to surround the semiconductor device while a focussed electron beam or ion beam is applied to the substrate of the device whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in that region, so that the intensified microwave field creates a local heating effect in the substrate to perform a local annealing action.

REFERENCES:
patent: 4273950 (1981-06-01), Chitre
patent: 4303455 (1981-12-01), Splinter et al.
patent: 4490183 (1984-12-01), Scovell
patent: 4593168 (1986-06-01), Amada

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