Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-11-19
1995-05-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 359 59, H01L 2701, H01L 2713, H01L 2978
Patent
active
054142830
ABSTRACT:
A thin film transistor (TFT) array in an active matrix liquid crystal display (AMLCD) including a centrally located round source electrode substantially completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT of this invention provides for a thin film transistor having a reduced parasitic capacitance and decreased photosensitivity. The TFTs of this invention are located at the intersections of gate and drain lines of an active matrix LCD array thereby increasing the size of the pixel display openings of the matrix array.
REFERENCES:
patent: 3405330 (1968-10-01), Hilbiber
patent: 3413531 (1968-11-01), Leith
patent: 3454844 (1969-07-01), Dill
patent: 3492548 (1970-01-01), Goodman
patent: 3675091 (1972-07-01), Naomoto et al.
patent: 3787962 (1974-01-01), Yoshida et al.
patent: 3862360 (1975-01-01), Dill et al.
patent: 4112333 (1978-09-01), Asars et al.
patent: 4159561 (1979-07-01), Dingwall
patent: 4288806 (1981-09-01), Ronen
patent: 4333225 (1982-06-01), Yeh
patent: 4537654 (1985-08-01), Berenz et al.
patent: 4654117 (1987-03-01), Aoki et al.
patent: 4686553 (1987-08-01), Possin
patent: 4689116 (1987-08-01), Coissard et al.
patent: 4689872 (1987-09-01), Appels et al.
patent: 4697331 (1987-10-01), Boultrop et al.
patent: 4717689 (1988-01-01), Maas et al.
patent: 4738936 (1988-04-01), Rice
patent: 4762398 (1988-08-01), Yasui et al.
patent: 4797108 (1989-01-01), Crowther
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4843443 (1989-06-01), Ovshinsky et al.
patent: 4853345 (1989-08-01), Himelick
patent: 4855806 (1989-08-01), Parks et al.
patent: 4859623 (1989-08-01), Busta
patent: 4862234 (1989-08-01), Koden
patent: 4877749 (1989-10-01), Quigg
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4904613 (1990-07-01), Coe et al.
patent: 4914051 (1990-04-01), Huie et al.
patent: 4914058 (1990-04-01), Blanchard
patent: 4949141 (1990-08-01), Busta
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5047819 (1991-09-01), Tanaka et al.
patent: 5051800 (1991-09-01), Shoji et al.
patent: 5055899 (1991-10-01), Wakai et al.
patent: 5058995 (1991-10-01), Plus
patent: 5073519 (1991-12-01), Rodder
Boer Willem den
Yang Mohshi
Crane Sara W.
OIS Optical Imaging Systems, Inc.
LandOfFree
TFT with reduced parasitic capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with TFT with reduced parasitic capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TFT with reduced parasitic capacitance will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1708090