Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reissue Patent
2007-01-02
2007-01-02
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C349S043000, C349S152000, C349S139000
Reissue Patent
active
10419474
ABSTRACT:
A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.
REFERENCES:
patent: 5998230 (1999-12-01), Gee-Sung et al.
patent: 6008065 (1999-12-01), Lee et al.
patent: 6288414 (2001-09-01), Ahn
patent: 5-243333 (1993-09-01), None
patent: 1998-072407 (1998-11-01), None
Fujikawa Tetsuya
Hayashi Shougo
Kihara Masahiro
Sukenori Hidetoshi
Tanaka Yoshinori
Fujitsu Limited
Greer Burns & Crain Ltd.
Tran Minh-Loan
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