TFT substrate for liquid crystal display apparatus and...

Details TFT substrate for liquid crystal display apparatus and... TFT substrate for liquid crystal display apparatus and...

2007-12-04

2007-12-04

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S059000, C257S072000, C257S753000, C257S762000, C257SE27131, C349S046000, C349S139000, C349S147000, C349S148000

Reexamination Certificate

active

10535304

ABSTRACT:
There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy includes a material from about 0.5 at % to about 15 at % to form a gate wiring layer. The material is used to form the diffusion barrier layer (11). A compound that comprises a material such as Zr, Ti, Hf, V, Ta, Ni, Cr, Nb, Co, Mn, Mo, W, Rh, Pd, Pt, etc. is deposited on the diffusion barrier layer (11) to a thickness from about 50 Å to about 5,000 Å. The deposited compound is then heat treated to convert the deposited compound into a silicide compound (11b). The transistor substrate has low resistance and high conductance. Also, etching process is simplified, and a mutual diffusion is prevented by means of the thin diffusion barrier layer.

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