Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-07-19
2011-07-19
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S223000, C257S291000, C257S443000, C257S059000, C257SE29296, C257SE21190, C257SE33019, C257SE21476, C438S104000
Reexamination Certificate
active
07982215
ABSTRACT:
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
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Inoue Kazuyoshi
Tanaka Nobuo
Tanaka, legal representative Tokie
Yano Koki
Armand Marc
Idemitsu Kosan Co. Ltd.
Louie Wai-Sing
Millen White Zelano & Branigan P.C.
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