TFT substrate and method for manufacturing TFT substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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C257S223000, C257S291000, C257S443000, C257S059000, C257SE29296, C257SE21190, C257SE33019, C257SE21476, C438S104000

Reexamination Certificate

active

07982215

ABSTRACT:
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.

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patent: 2005019664 (2005-01-01), None
patent: 2005019664 (2005-01-01), None
patent: 2005049667 (2005-02-01), None
patent: 2005049667 (2005-02-01), None
patent: 2005106881 (2005-04-01), None
patent: 2005106881 (2005-04-01), None
patent: 2005108912 (2005-04-01), None
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