Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-04-02
1998-07-14
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257258, 257443, 349138, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
057808716
ABSTRACT:
This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.
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Boer Willem den
Gu Tieer
Zhong John Z. Z.
OIS Optical Imaging Systems, Inc.
Saadat Mahshid D.
Wilson Allan R.
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