Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-01-30
2007-01-30
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S408000, C257S524000, C438S157000, C438S164000
Reexamination Certificate
active
10834337
ABSTRACT:
A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.
REFERENCES:
patent: 5292675 (1994-03-01), Codama
patent: 6429485 (2002-08-01), Ha et al.
patent: 6563135 (2003-05-01), Park
patent: 6624443 (2003-09-01), Tanabe et al.
Chang Shih-Chang
Deng De-Hua
Tsai Yaw-Ming
Perkins Pamela E
Smith Zandra V.
Toppoly Optoelectronics Corp.
Volpe & Koenig P.C.
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