Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S066000, C257S072000
Reexamination Certificate
active
07102160
ABSTRACT:
TFT LCD including a first substrate and a second substrate, a scanning line on the first substrate, a signal line formed to cross the scanning line, a channel layer formed along the signal line and extended to a portion of the scanning line, source and drain electrodes formed separated on the channel layer over the scanning line, a pixel electrode connected to the drain electrode, and a liquid crystal layer formed between the first substrate and the second substrate.
REFERENCES:
patent: 6016174 (2000-01-01), Endo et al.
patent: 6377323 (2002-04-01), Ono et al.
patent: 62 171161 (1987-07-01), None
patent: 630 48526 (1988-03-01), None
patent: 7-66419 (1995-03-01), None
patent: 70 72510 (1995-03-01), None
LG.Philips LCD CO, Ltd.
Loke Steven
McKena Long & Aldridge LLP
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