TFT having a fluorocarbon-containing layer

Details TFT having a fluorocarbon-containing layer TFT having a fluorocarbon-containing layer

2007-10-16

2007-10-16

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S642000, C257SE21007, C257SE21024, C257SE21299, C257SE27117, C438S099000

Reexamination Certificate

active

11276694

ABSTRACT:
A thin film transistor composed of: (a) a semiconductor layer including a thiophene compound, wherein the thiophene compound comprises one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages; (b) a gate dielectric; and (c) a layer contacting the gate dielectric disposed between the semiconductor layer and the gate dielectric, wherein the layer comprises a substance comprising a fluorocarbon structure.

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