Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-06-29
1994-05-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257291, 257436, 257439, 257463, 257464, 25037014, H01L 3110, H01L 2714
Patent
active
053089960
ABSTRACT:
A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.
REFERENCES:
patent: 3289054 (1966-11-01), Haering
patent: 4143266 (1979-03-01), Borel et al.
patent: 4461956 (1984-07-01), Hatanaka
patent: 4886962 (1989-12-01), Gofuku et al.
patent: 4931661 (1990-06-01), Fukaya et al.
English translation of the pertinent part of the Japanese Laid-Open Gazette No. 60-239072.
Fukaya Masaki
Gofuku Ihachiro
Itabashi Satoshi
Komatsu Toshiyuki
Osada Yoshiyuki
Canon Kabushiki Kaisha
Jackson Jerome
LandOfFree
TFT device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with TFT device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TFT device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2116226