TFT containing coalesced nanoparticles

Details TFT containing coalesced nanoparticles TFT containing coalesced nanoparticles

2007-12-12

2009-11-03

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S040000, C257S057000, C257S066000

Reexamination Certificate

active

07612374

ABSTRACT:
A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer, and wherein at least one of the source electrode, the drain electrode, and the gate electrode comprise coalesced coinage metal containing nanoparticles and a residual amount of one or both of a stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles and a decomposed stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles.

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