Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-03-22
2011-03-22
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE29117
Reexamination Certificate
active
07910928
ABSTRACT:
A four-mask process thin film transistor (TFT) array substrate and a method for fabricating the same is disclosed, which prevents a semiconductor tail from being formed. An open area is thus obtained and wavy noise is prevented from occurring. The method of fabricating a TFT array substrate comprises: forming a gate line, a gate electrode and a pad electrode on a substrate; sequentially depositing a gate insulation layer, a silicon layer and a metal layer on an entire surface of the substrate including the gate line; forming an open area in the pad electrode; forming a semiconductor layer, data line and source/drain electrodes by patterning the silicon layer and the metal layer; and forming a pixel electrode connected with the drain electrode and a transparent conductive layer connected with the pad electrode by depositing and patterning a transparent conductive material on the entire surface of the substrate including the data line, and simultaneously defining a channel region by separating the source and drain electrodes from each other.
REFERENCES:
patent: 6077730 (2000-06-01), Lee et al.
patent: 6188452 (2001-02-01), Kim et al.
patent: 6292237 (2001-09-01), Hebiguchi
patent: 6338989 (2002-01-01), Ahn et al.
patent: 6362031 (2002-03-01), Yamaguchi et al.
patent: 6429057 (2002-08-01), Hong et al.
patent: 6740596 (2004-05-01), Hayase et al.
patent: 2002/0160555 (2002-10-01), Hong et al.
patent: 2004/0232421 (2004-11-01), Ono et al.
patent: 2005/0087742 (2005-04-01), Chang et al.
patent: 2006/0138426 (2006-06-01), Yoo et al.
patent: 2007/0164284 (2007-07-01), Park et al.
patent: 2009/0284677 (2009-11-01), Shin et al.
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Sandvik Benjamin P
LandOfFree
TFT array substrate and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with TFT array substrate and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TFT array substrate and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2686538