TFEL device having multiple layer insulators

Stock material or miscellaneous articles – Composite – Of inorganic material

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428917, 313509, 427 66, H05B 3312

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active

048973190

ABSTRACT:
A structure for a thin-film electroluminescent (TFEL) device includes an EL phosphor layer sandwiched between a pair of insulator stacks, at least one of the stacks including a thin layer of silicon oxynitride in direct contact with the last grown side of the phosphor layer and a second thicker layer of barium tantalate. The silicon oxynitride layer has high resistivity, and when combined with a second insulator having a high dielectric constant, such as barium tantalate, produces an increase in luminance of the phosphor layer at conventional voltages. Both insulator stacks may include a silicon oxynitride layer, but this layer is in contact only with the last grown side of the EL phosphor layer. On the other side of the EL phosphor layer the high dielectric constant layer lies between the silicon oxynitride and the EL phosphor layer.

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Kobayashi, et al., "Thin Film ZnS:Mn Electroluminescent Device," IEEE Transactions on Electron Devices, vol. Ed-29, No. 10, Oct. 1982.
Mita, et al., "ZnS:Mn Thin Film Electroluminescent Devices Having Doubly-Stacked Insulating Layers," Japanese Journal of Applied Physics, vol. 26, No. 5, May 1987, pp. L541-L543.
Ohwaki, et al., "Stacked Insulator Structure Thin-Film Electroluminescent Display Devices," Abstract No. 1222, Electrochemical Society Meeting, Honolulu, HI, Oct. 1987.
Kozawaguchi, et al., "Thin-Film Electroluminescent Device Employing Ta.sub.2 O.sub.5 RF Sputtered Insulating Film," Japanese Journal of Applied Physics, vol. 21, No. 7, Jul. 1982, pp. 1028-1031.

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