TFD LCD panel

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S602000, C257SE27132, C257SE29343, C257SE27131, C349S049000, C349S051000, C349S052000

Reexamination Certificate

active

07432528

ABSTRACT:
Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitting signal and the transparent conductive layer is used as bottom metal layer of metal-insulator-metal (MIM) thin film diode. The metal layer, the transparent conductive layer, and the insulating layer are defined with desired patterns. Further, a dielectric layer is formed over the substrate, metal layer, the transparent conductive layer, and the insulating layer, and defined to form the locations of electrode terminal and MIM thin film diode by using lithographic process. Next, another transparent conductive layer is formed on the dielectric layer and defined to form a pixel electrode and top metal layer of the MIM thin film diode by using lithographic process.

REFERENCES:
patent: 5879960 (1999-03-01), Miyoshi
patent: 5926236 (1999-07-01), den Boer et al.
patent: 6040201 (2000-03-01), Akiba et al.
patent: 6271050 (2001-08-01), Akiba et al.
patent: 6734460 (2004-05-01), Okumura et al.
patent: 2007/0040956 (2007-02-01), Shin et al.

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