Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S093000, C438S022000, C438S033000, C438S034000, C438S038000, C438S039000
Reexamination Certificate
active
07915622
ABSTRACT:
A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer (2) comprising a doped III-V or II-VI group compound semiconductor or alloys of such semiconductors deposited by epitaxial lateral overgrowth (ELOG) onto a patterned substrate (1); a textured undoped or doped active layer (3) comprising a III-V or II-VI group semiconductor or alloys of such semiconductors and where radiative recombination of electrons aid holes occurs or intersubband transition occurs; and a second textured cladding and contact layer (4) comprising a doped III-V or II-VI group semiconductor or alloys of such semiconductors.
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UK Search Report dated Feb. 4, 2005, for corresponding U.K. Application No. GB 0421500.0, 3 pgs.
Christie Parker & Hale LLP
Duong Khanh B
Nanogan Limited
Smith Zandra
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