Textured crystal picosecond photoresponsive element

Metal treatment – Stock – Ferrous

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148DIG150, 357 4, 357 60, H01L 2714, H01L 3100

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active

046268839

ABSTRACT:
Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate a textured layer of domain regions wherein the domain size is such that the lifetime is proportional to the square of the size divided by the diffusion coefficient of the semiconductor material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of <111> GaAs grown on a <0001> hexagonal monocrystalline Al.sub.2 O.sub.3 having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm.sup.2 volt.sup.-1 sec.sup.-1.

REFERENCES:
patent: 4113531 (1978-09-01), Zanio et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
"Picosecond Photoconductivity in Polycrystalline CdTe Films Prepared by UV Enhanced OMCVD" by A. M. Johnson et al., Technical Paper presented at the Topical Meeting on Picosecond Electronics and Optoelectronics, Mar. 13-15, 1985, Incline Village, Nevada (FB3-1 and FB3-2).
IBM Technical Disclosure Bulletin, vol. 27, No. 3, Aug. 1984, p. 1621, "Photoconducting Pulse Generator of GaAs with Picosecond Response" by J. A. Kash.
Appl. Phys. Lett. 45(3), Aug. 1, 1984, p. 289, "Observed Circuit Limits to Time Resolution in Correlation Measurements with Si-on-Sapphire, GaAs, and InP Picosecond Photoconductors" by R. B. Hammond et al.
IEEE Journal of Quantum Electronics, vol. QE-19, No. 4, Apr. 1983, p. 639, "Impulse Response of Photoconductors in Transmission Lines" by D. H. Auston.

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