Tetrode biasing circuit

Details Tetrode biasing circuit Tetrode biasing circuit

1992-09-30

1994-05-31

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330290, 330293, 330307, A03F 316

Patent

active

053172825

ABSTRACT:
in a semiconductor array having a tetrode integrated in a semiconductor element, the tetrode comprises two field-effect transistors having a common semiconductor area forming the drain electrode of the first field-effect transistor and the source electrode of the second field-effect transistor. The semiconductor array has a three-pole array integrated in the semiconductor element and functioning as a feedback element, the input of the array is connected to the common semiconductor area of the tetrode. The output of the three-pole array is connected to the semiconductor area forming the gate electrode of the first field-effect transistor of the tetrode.

REFERENCES:
patent: 4658220 (1987-04-01), Heston et al.
Bauelemente der Elektrotechnik, Bd. 6, H. 47, 1971, pp. 54-60; R. Birchel: "Der Dual-Gate-MOS-FET . . . "

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